Pressure Induced Deep Gap State of Oxygen in GaN
نویسندگان
چکیده
O and Si donors in GaN are studied by Raman spectroscopy under hydrostatic pressure p. The ground state of O is found to transfer from a shallow level to a deep gap state at p . 20 GPa reminiscent of DX centers in GaAs. Transferred to AlxGa12xN we predict that O induces a deep gap state for x . 0.40. In GaN:Si no such state is induced up to the highest pressure obtained sp 25 GPad equivalent to x 0.56 in AlxGa12xN and possibly higher. We attribute this distinction to the lattice sites of the dopants. O substituting for N is found to be the origin of high free electron concentration in bulk GaN crystals. [S0031-9007(97)03179-7]
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